JRANN.MS.ID.555554

Abstract

Here in in this article an attempt has been made to study various types of microscopes in detail. In this review paper we have discussed various types of microscopes which are classified as electron microscopes, x-ray microscope and probe microscopes. Also, the various subtypes of each of these microscopes have been presented in this paper. This paper focuses on the historical developments, Principles of operation, instrumentation, advantages and limitations of the various types and subtypes of the microscopes. The properties of the materials at nanoscale depend upon their size, shape and nature. As nanomaterials are invisible, we require various advanced characterization techniques to reveal their morphology. The various advanced characterization techniques required for the analysis of nanomaterials are thoroughly discussed in this paper.

Keywords: Electron microscope; Probe microscope; X-Ray microscope; Fluorescence microscope

Electron Microscope

This type of microscope uses beams of accelerated electrons as a source of illumination. The wavelength of an electron is 100,000 times shorter than the visible photons. Consequently, electron microscopes are having higher resolving power than optical microscopes. The electron microscope can be further sub classified into different types such as SEM and TEM based upon their construction and type of action and information we get. Another advanced type of electron microscope is Combined SEM and TEM where two types of electron microscopes are combined together.

Scanning Electron Microscope:

Scientists and engineers have been striving to achieve high magnification and resolution of microscopic and nanoscale entities. Numerous researchers have made efforts in this field, with a notable and successful contribution by German physicist Ernest Ruska and German electrical engineer Max Knoll in 1931. The scanning electron microscope (SEM) is a type of electron microscope that creates images by scanning a surface with a focused beam of electrons. These electrons interact with the atoms in the sample, generating various signals that provide information about the sample’s surface topography and composition. The electron beam scans in a raster pattern, and the beam’s position is combined with the intensity of the detected signal to form an image. SEM is used to observe specimen surfaces, where a fine electron beam causes the emission of secondary electrons from the surface. The surface topography can be observed in two dimensions. When the specimen is struck by an incident electron beam, it emits X-rays and three types of electrons: primary backscattered electrons, secondary electrons, and Auger electrons. SEM devices primarily utilize primary backscattered electrons [1-7].

Instrumentation and Working of SEM:

The essential components of an SEM include the electron source (gun), electron lenses, sample stage, detectors for all relevant signals, display/data output device, power supply, vacuum system, cooling system, infrastructure requirements, vibration-free flooring, and a room free from ambient magnetic and electric fields.
a) Electron Gun: An electron gun generates electron beams, which can be emitted either by heating a filament (thermionic emission) or by applying a high potential difference (field emission). Electron microscopes typically use magnetic lenses. To create a strong magnetic lens, the density of magnetic lines must be increased, achieved through a precisely fabricated pole piece with a narrow gap. A key characteristic of a magnetic lens is that changing the current passing through the coil alters the lens’s strength, a feature not possible with optical microscopes.
b) Condenser lens and objective lens: When a lens is positioned below the electron gun, it allows for the adjustment of the electron beam diameter. SEM requires a finely focused electron beam (probe), achieved by using a two-stage lens system that combines the condenser and objective lenses. Consequently, the electron beam from the electron gun is focused by these two lenses, producing a small electron probe.
c) Specimen stage: In an electron microscope, specimens are observed at high magnification and resolution. The SEM specimen stage is designed to allow various movements, including: (a) horizontal movement, (b) vertical movement, (c) specimen tilting, and (d) rotation. The X and Y movements are used to select the field of view, while the Z movement adjusts image resolution and depth of focus.
d) Secondary Electron Detector: When a specimen in an electron microscope is bombarded by electrons from an electron gun, it emits secondary electrons. A secondary electron detector, with a scintillator coated on its tip and a high potential difference applied, detects these secondary electrons. The emitted electrons are attracted to the high voltage, generating light. When the electron beam strikes the sample, some incident electrons interact with the nucleus of atoms. These negatively charged electrons are attracted to the positively charged nucleus, encircle it, and then exit the sample without losing speed, becoming backscattered electrons. Secondary electrons originate from surface regions, while backscattered electrons re-emerge from the sample. Backscattered and secondary electrons provide different types of information. Backscattered electrons are highly sensitive to atomic numbers, with brighter regions indicating atoms with higher atomic numbers and darker regions indicating atoms with lower atomic numbers. Secondary electrons offer surface information about the sample.
e) Secondary Electrons: Secondary electrons originate from the surface of the sample being studied, generated through inelastic interactions between the primary electron beam and the sample. These electrons have lower energy compared to primary or backscattered electrons and are essential for determining the topography of the sample (Figure 1).

Principle of SEM

A monochromatic beam directed at a solid substrate surface generates various signals, contingent on the substrate’s composition and structure. In SEM imaging, backscattered or secondary electrons are commonly employed, with their intensity linked to the atomic number of the materials involved. Each backscattered electron can be captured, amplified, and utilized to modulate the brightness spot on a cathode ray tube (CRT). To acquire signals from an area, the electron beam scans over the specimen surface via two pairs of electromagnetic deflection coils, synchronized with the CRT beam. The signals are transferred point by point, generating a signal map of the scanned region displayed on a long-persistence phosphor CRT screen. Changes in brightness indicate variations in specific properties within the scanned area of the specimen (Figure 2).

The scattering cross section for back-scattered electrons is given as [2], where, Z is atomic number and E is electric field.



Here the cross-section is proportional to Z2. Hence, the backscattered electrons are used for the Z contrast or for compositional mapping.

Limitation of SEM:

a) Sample Preparation Requirements: SEM requires samples to be conductive or coated with a conductive material (e.g., gold, carbon) to prevent charging effects caused by the electron beam. Sample preparation can be time-consuming and may alter the sample’s natural properties.
b) Vacuum Environment: SEM operates under high vacuum conditions, which can limit the analysis of certain samples, especially those that are volatile, hydrated, or sensitive to vacuum conditions. Some samples may require specialized sample holders or environmental SEMs to maintain their integrity.
c) Limited Depth of Field: SEM has a shallow depth of field, meaning that only the surface of the sample is in focus at any given time. This can make it challenging to obtain clear images of three-dimensional structures or samples with rough surfaces.
d) Resolution: While SEM offers high-resolution imaging capabilities, the resolution is ultimately limited by factors such as the electron beam energy, specimen characteristics, and detector efficiency. Achieving sub-nanometer resolution often requires sophisticated instrumentation and careful optimization.
e) Sample Damage: The high-energy electron beam used in SEM can potentially damage the sample through processes such as electron beam-induced deposition, sample heating, or radiation damage. Minimizing beam exposure and optimizing imaging conditions can help mitigate sample damage.
f) Limited Chemical Information: SEM provides primarily morphological and topographical information about samples. While energy-dispersive X-ray spectroscopy (EDS) can be used for elemental analysis, it has limitations in terms of sensitivity, spatial resolution, and quantification accuracy compared to other analytical techniques like X-ray diffraction (XRD) or X-ray photoelectron spectroscopy (XPS).

Transmission Electron Microscope

Transmission Electron Microscope is a type of electron microscope that has three essential components viz. electron gun, image producing system, imaging recording system [8-15].

Instrumentation of TEM

a) Electron gun:
An electron gun is an essential component that generates a precisely controlled electron beam in a TEM (Transmission Electron Microscope). Positioned at the top of the TEM, the electron gun emits electrons that travel through the microscope›s vacuum tube. The key elements of an electron gun include the electron emitter, the biasing cylinder (Wehnelt cylinder), and the anode. The electron emitter is typically a tungsten filament covered by a control grid (Wehnelt cylinder), which has a central aperture aligned with the vacuum tube. The cathode, located either above or below this aperture, and the grid are negatively charged. The anode, typically disc-shaped with an axial hole, is positioned to receive the emitted electrons. As electrons are emitted from the cathode, they pass through the central aperture of the Wehnelt cylinder and are accelerated towards the anode at high voltage, maintaining a constant energy level. This configuration effectively focuses the electron beam to interact with the specimen and produce a well-defined image.
b) Image Producing System:
The imaging system of an electron microscope includes an objective lens, a movable stage for holding the specimen, and intermediate and projector lenses. These components collaborate to focus electrons passing through the specimen, resulting in a significantly magnified image. The objective lens, typically with a short focal length of approximately 1-5 mm, first forms an intermediate image from the condenser. This intermediate image is then transmitted to the projector lenses for further magnification. There are two types of projector lenses: the intermediate lens, which enables greater image magnification, and the projector lens, which generally offers even higher magnification than the intermediate lens.
c) Image Recording System:
The image recording system includes a fluorescent screen used for viewing and focusing on the image, along with digital cameras capable of effectively recording and capturing it. To maintain optimal imaging conditions, a vacuum system prevents electron collisions with air molecules that could disrupt their movement and focusing ability. This vacuum system comprises a pump, gauge, valves, and power supply, ensuring electrons move directly to form the image without interference. The resulting image is monochromatic, typically appearing greyish or black, designed to be easily visible to the human eye by passing through the fluorescent screen fixed at the base of the microscope.

Working Principle:

Transmission electron microscopy (TEM) is a microscopic technique where an electron beam passes through an ultrathin specimen, interacting with it as it traverses. Its operational principle shares similarities with light microscopy, but differs fundamentally in the use of electrons instead of light rays to focus on and produce images of the specimen. Electrons have shorter wavelengths compared to light, enabling higher resolution capabilities in TEM. Unlike light microscopes where resolution increases with shorter wavelengths, TEM achieves resolution by increasing the energy of transmitted electrons.

In TEM analysis, a thin specimen is exposed to electrons to ensure uniform electron intensity across the illuminated area. As these electrons traverse the specimen, they either undergo scattering processes or pass through unaffected, leading to a nonuniform distribution of electrons emerging from the specimen’s surface. This distribution contains detailed structural and chemical information about the specimen.

An electron microscope is designed to visualize this electron distribution in two main ways: the angular distribution of scattering, seen as diffraction patterns, and the spatial distribution of scattering, observed as contrast in specimen images. This setup enables direct observation of the specimen area that generates the diffraction pattern. The fundamental components of a transmission electron microscope are depicted in Figure 3.

Working principle of TEM:

a) The electron gun serves as a crucial source, generating a stream of monochromatic electrons.
b) TEM operates using accelerated electron beams instead of light, focusing them to create images.
c) The magnification capability exceeds that of a light microscope by over 2 million times.
d) Condenser lenses 1 and 2 concentrate the stream into a small, coherent beam. The first lens, adjustable via a spot size knob, primarily determines the beam’s size, while the second lens, controlled by an intensity or brightness knob, further adjusts the spot size on the sample.
e) The condenser aperture limits the electron beam, filtering out high-angle electrons.
f) The electron beam impacts the specimen, with a portion of it passing through.
g) The transmitted portion is then focused by the objective lens.
h) Optical objective and selected area metal apertures further control the beam. The objective aperture enhances contrast by blocking high-angle diffracted electrons, while the selected area aperture enables examination of electron diffraction patterns caused by the ordered arrangement of atoms in the sample.
i) A photographic image is captured from the electrons that have passed through the thin specimen under study. These images strike a phosphorus image screen, generating light that allows observation. Darker areas in the image indicate regions where fewer electrons transmitted through the sample.


Limitation of TEM:

a) Sample Preparation: TEM requires samples to be extremely thin (typically less than 100 nanometers) to allow electrons to pass through. Preparing such thin samples can be challenging and often involves techniques like ultramicrotomy or ion milling, which can introduce artifacts. Potentially damage sample or alter the sample’s structure.
b) Vacuum Environment: TEM operates under high vacuum conditions, which can limit the analysis of certain samples, especially those that are volatile or hydrated. Some samples may require specialized sample holders or environmental TEMs to maintain their integrity under vacuum.
c) Electron Beam Resolution: While TEM offers extremely high resolution, the achievable resolution is ultimately limited by factors such as the electron beam energy, specimen thickness, and instrumental aberrations. Achieving atomic resolution often requires sophisticated instrumentation and careful optimization.
d) Beam-sensitive Samples: Some samples are highly sensitive to the electron beam and may undergo structural changes or damage even at relatively low beam energies. Biological specimens, organic materials, and certain nanomaterials are particularly prone to beam damage.
e) Depth of Field: Similar to SEM, TEM has a limited depth of field, meaning that only a thin section of the sample is in focus at any given time. This can make it challenging to obtain clear images of three-dimensional structures or samples with significant depth variations (Table 1).

Combing SEM and TEM Together:

This instrument is called scanning transmission electron microscopy. This instrument can be applied to a TEM tool. Most modern TEM can be switched to STEM mode. In STEM mode, the beam is finally focused and scans the sample area while the image is generated by the transmitted electron. Combining Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) into a single instrument, often referred to as a “dual-beam” or “dual-mode” microscope, offers several advantages for comprehensive material characterization. Although such instruments are not commonplace, they offer significant benefits in terms of sample preparation, imaging, and analysis [16-21].

Instrument Configuration:

The instrument would likely consist of a platform that integrates both SEM and TEM capabilities. The SEM component would typically be used for initial sample inspection, navigation, and coarse imaging due to its relatively large depth of field and ease of use. The TEM component would allow for higherresolution imaging and detailed analysis of thin sections of the sample.
a) Sample Preparation: The combined instrument would streamline sample preparation, as the same sample could be examined using both SEM and TEM without the need for additional sample handling. Initial sample inspection and rough characterization could be performed using SEM, guiding subsequent TEM analysis of specific regions of interest.
b) Imaging and Analysis: SEM imaging would provide detailed surface morphology and topography information at relatively low magnifications. TEM imaging would offer higherresolution imaging of internal structures and thin sections of the sample, providing atomic-scale details of crystal structure, defects, and interfaces. Combined SEM and TEM analysis would allow for comprehensive material characterization, including investigation of microstructure, phase identification, chemical composition, and elemental mapping.

Applications:

a) Material Science: Such instruments would be invaluable for characterizing nanomaterials, nanoparticles, and nanostructures, providing insights into their morphology, size distribution, and crystalline structure. Biological Sciences: In biology and life sciences, combined SEM/TEM capabilities could facilitate the study of biological specimens, such as cells, tissues, and biomaterials, offering detailed imaging of ultrastructure and subcellular organelles.
b) Research and Development: Combined SEM/TEM instruments would be essential tools for research laboratories and industrial R&D facilities.

Limitations of combined SEM and TEM:

a) Instrument Complexity: Integrated SEM-TEM systems are complex and require sophisticated engineering to combine two distinct imaging modalities into a single instrument. This complexity can lead to maintenance challenges, and longer training times for operators.
b) Sample Preparation Challenges: Samples for combined SEM and TEM analysis often require extensive preparation to meet the requirements of both techniques. Achieving the necessary thinness for TEM while maintaining conductivity or surface topography for SEM can be challenging and may introduce artifacts or limitations.
c) Limited Field of View: While SEM provides a wide field of view, TEM offers higher resolution but a much narrower field of view. Combined systems typically sacrifice some of the SEM’s field of view to accommodate the TEM column, leading to limitations in imaging large areas at high resolution.
d) Sequential Imaging: In most combined SEM-TEM systems, imaging modes are sequential rather than simultaneous. This means that switching between SEM and TEM imaging requires physical adjustments of the sample and optics, leading to longer analysis times and potential disruptions to sample stability.
e) Complexity of Data Interpretation: Combined SEMTEM datasets can be complex to interpret, as they provide complementary information from two different imaging modalities. Integrating and correlating data from SEM and TEM images may require advanced software tools and expertise, especially for quantitative analysis or multi-modal imaging.
f) Limited TEM Performance: In some integrated systems, the TEM functionality may be limited compared to standalone TEM instruments. This can include constraints on achievable resolution, imaging modes, or analytical capabilities, depending on the design and specifications of the combined system.

X-Ray Microscope:

An X-ray microscope is an imaging instrument that uses X-rays instead of visible light to create high-resolution images of objects, typically on the nanometer scale [22-27].

Instrumentation of X-Ray Microscopy

a) X-ray Source: X-ray microscopes require a source of X-ray radiation to illuminate the sample. Common X-ray sources include X –ray tubes and Synchrotron radiations:
b) X-ray tubes: Produce X-rays by accelerating electrons to high velocities and colliding them with a metal target.
c) Synchrotron radiation: Highly intense and tunable X-rays are generated by accelerating charged particles (electrons or protons) to nearly the speed of light in a synchrotron facility.
d) X-ray Optics: X-ray optics are used to focus and manipulate the X-ray beam before it interacts with the sample.
Unlike optical microscopes, X-ray microscopes cannot use conventional lenses due to the high energy and short wavelengths of X-rays. Instead, X-ray optics contains Fresnel zone plate, Multilayer mirrors, capillary optics.
e) Sample Stage: The sample stage holds the specimen and allows for precise positioning and manipulation during imaging. It may include mechanisms for translation, rotation, and tilt to adjust the orientation of the sample relative to the X-ray beam.
f) Detector: X-ray detectors capture the X-rays transmitted through or scattered by the sample to create an image.
g) X-ray CCD (charge-coupled device) cameras: Capture X-ray photons and convert them into electronic signals for image formation.
h) X-ray sensitive films: Traditional photographic films that react to X-ray exposure. X-ray-sensitive scintillators coupled with photodetectors: Convert X-ray photons into visible light, which is then detected by photodetectors.
i) Data Acquisition System: A data acquisition system processes and records the signals from the X-ray detector to generate digital images. It may include analog-to-digital converters, data storage devices, and software for image processing and analysis.
j) Environmental Control: X-ray microscopes may operate in controlled environments to minimize sample degradation and maintain stable imaging conditions. This may include temperature control, humidity control, and the elimination of vibration and electromagnetic interference.
k) Safety Measures: Due to the ionizing nature of X-rays, safety measures such as radiation shielding, interlocks, and safety protocols are essential to protect operators and ensure regulatory compliance.
l) Synchrotron Facility (for synchrotron-based X-ray microscopy): Synchrotron-based X-ray microscopes require access to a synchrotron radiation facility equipped with a dedicated beamline optimized for X-ray microscopy. These facilities provide intense and tunable X-ray beams for high-resolution imaging experiments (Figure 4).


Key Components of X-Ray Microscopy

a) X-ray Source: X-ray microscopes typically use a synchrotron radiation source or an X-ray tube as the source of X-rays. Synchrotron radiation sources produce highly intense and focused X-ray beams by accelerating electrons to nearly the speed of light and directing them through a magnetic field. X-ray tubes generate X-rays by accelerating electrons and bombarding a metal target.
b) Focusing Optics: X-ray microscopes utilize various types of focusing optics to concentrate the X-ray beam onto the specimen. These may include mirrors, lenses, or diffractive optics designed to bend and focus X-rays to achieve high spatial resolution.
c) Sample Stage: The sample stage is a platform on which the specimen is mounted for imaging. It may be equipped with precise positioning controls to manipulate the specimen and adjust its orientation for imaging from different angles.
d) Detector: X-ray microscopes employ specialized X-ray detectors to capture the X-rays that interact with the specimen and produce images. These detectors may include charge-coupled devices (CCDs), complementary metal-oxide-semiconductor (CMOS) sensors, or X-ray film, depending on the imaging requirements and desired resolution.
e) Image Reconstruction Software: X-ray microscopy generates 2D and 3D images of the specimen based on the detected X-ray signals. Sophisticated image reconstruction algorithms and software are used to process the raw data and reconstruct the images with high resolution and contrast.

Advantages of X-Ray Microscopy

a) High Resolution: X-rays have shorter wavelengths than visible light, allowing X-ray microscopes to achieve higher resolution and visualize biological structures on the nanometer scale.
b) Non-destructive Imaging: X-ray microscopy is nondestructive and can image samples in their native state without the need for staining or fixation.
c) Elemental Contrast: X-ray microscopes can provide elemental contrast by detecting differences in the absorption or fluorescence of X-rays by different elements within the specimen.
d) 3D Imaging: X-ray microscopes can generate threedimensional images of specimens by acquiring multiple 2D image slices at different depths and reconstructing them into a 3D volume. This enables the visualization of internal structures and complex morphologies in three dimensions.

Principle of X-Ray Microscope:

The principle of X-ray microscopy is based on the interaction of X-rays with matter, which results in absorption, scattering, and diffraction phenomena.
a) Sample Interaction: When the X-ray beam interacts with the sample, it undergoes various interactions depending on the sample’s composition and structure. These interactions include absorption, scattering, fluorescence, and phase contrast.
b) Absorption: X-rays are absorbed by the atoms within the sample, with the degree of absorption depending on the atomic number and density of the material. Regions of higher absorption appear darker in the X-ray image, providing contrast between different materials or structures within the sample.
c) Scattering: X-rays can be scattered by the sample’s microstructure, leading to changes in the direction and intensity of the X-ray beam. Scattering phenomena, such as Compton scattering and Rayleigh scattering, contribute to image contrast and provide information about the sample’s density and composition.
d) Fluorescence: Some materials exhibit fluorescence when exposed to X-rays, emitting characteristic secondary X-rays with wavelengths different from the incident X-rays. Fluorescence imaging techniques can be used to map specific elements within the sample based on their fluorescence spectra.
e) Phase Contrast: In addition to absorption-based contrast, X-ray microscopy can utilize phase contrast techniques to enhance image contrast by exploiting differences in the phase of the X-ray wavefront as it passes through the sample. Phase contrast imaging is particularly useful for visualizing low-contrast features and soft tissues.
f) Detection and Imaging: After interacting with the sample, the X-ray beam is collected by a detector, such as an X-raysensitive CCD camera or a phosphor screen coupled to a chargecoupled device (CCD).
g) Data Analysis and Reconstruction: Advanced image processing and reconstruction techniques are often employed to enhance the quality and resolution of X-ray microscopy images. This may include tomographic reconstruction methods for generating three-dimensional images from a series of twodimensional projections.

Limitations of X-Ray Microscope:

a) Limited Depth of Penetration: X-rays have limited penetration depth in most materials, particularly dense and thick samples. This can restrict the imaging of samples with significant thickness, requiring thinning or sectioning of the sample to obtain clear images.
b) Radiation Damage: X-rays can cause radiation damage to biological samples, leading to alterations in sample morphology, chemistry, and viability. Prolonged exposure to X-rays can induce DNA damage, protein denaturation, and other cellular changes, affecting the integrity of the sample and limiting the duration of observation.
c) Sample Preparation: Sample preparation for X-ray microscopy often involves complex and time-consuming procedures, such as embedding, sectioning, and staining.
d) Limited Contrast for Soft Materials: X-ray microscopy is less sensitive to soft materials and low-contrast features compared to techniques such as electron microscopy or optical microscopy. This is challenging to visualize certain biological tissues, polymers, and organic materials without the use of contrast agents or specialized imaging techniques.
e) Resolution Limitations: Although X-ray microscopy offers high-resolution imaging capabilities, achieving subnanometer resolution is challenging due to limitations in X-ray optics and detector technology.
f) Radiation Safety: X-ray microscopy involves the use of ionizing radiation, which poses potential health risks to operators and researchers. Proper radiation safety protocols, including shielding, monitoring, and dosimetry, are essential to minimize radiation exposure and ensure safe operation.
g) Data Analysis Complexity: Analyzing and interpreting X-ray microscopy data can be complex and computationally intensive, particularly for three-dimensional imaging and tomographic reconstruction (Table 2).

Probe Microscopy

The various types of microscopes under the category of probe microscopy are described below:

Scanning Probe Microscope:

Scanning Probe Microscopy (SPM) is a group of techniques used for imaging and analyzing surfaces at the nanometer scale. Unlike traditional optical or electron microscopy, which rely on lenses and electromagnetic fields to produce images, SPM operates by scanning a sharp probe over the surface of a sample to measure various surface properties with extremely high resolution SPM works by bringing a sharp probe tip into close proximity or contact with the surface of a sample. As the probe tip interacts with the surface, various physical properties are measured, such as forces, currents, or mechanical vibrations [28-35].

Instrumentation of Components of SPM:

a) Probe Tip: The heart of SPM is a sharp probe tip, typically made of materials like silicon or silicon nitride, with a radius of only a few nanometers.
b) Cantilever: The probe tip is mounted on a flexible cantilever, which deflects in response to interactions with the sample surface.
c) Scanner: A precise scanning mechanism moves the probe tip laterally across the surface of the sample, allowing for the acquisition of high-resolution images.
d) Detector: Various detection methods are used to measure the interactions between the probe tip and the sample surface. These can include mechanical deflection of the cantilever, changes in tunneling current, or shifts in resonance frequency.
e) Feedback System: A feedback loop controls the distance between the probe tip and the sample surface to maintain a constant interaction force or tunneling current. This ensures that the probe tip stays in close proximity to the surface during scanning.

Main Techniques within SPM:

Atomic Force Microscopy (AFM): Measures surface topography by scanning a sharp probe tip over the sample surface and detecting the deflection of a cantilever.
a) Scanning Tunneling Microscopy (STM): Measures the tunneling current between the probe tip and the sample surface, providing atomic-scale resolution of conductive surfaces.
b) Scanning Kelvin Probe Microscopy (SKPM): Measures variations in surface potential by detecting changes in the electrostatic force between the probe tip and the sample surface.
c) Scanning Capacitance Microscopy (SCM): Maps variations in the capacitance between the probe tip and the sample surface, providing information about carrier concentrations in semiconductors.
d) Scanning Thermal Microscopy (SThM): Measures variations in temperature on the sample surface by detecting changes in the thermal conductivity or expansion of the cantilever.

Applications of SPM:

SPM is used in a wide range of scientific and technological fields, including nanotechnology, materials science, biology, and semiconductor device characterization.

It can provide high-resolution images of surfaces, reveal atomic-scale details, measure mechanical properties, and map variations in surface potential or conductivity.

Applications include surface roughness analysis, nanoscale patterning, biological imaging, characterization of thin films, and investigation of surface chemistry.

Atomic Force Microscope:

The AFM can operate in several modes, primarily distinguished by how the tip interacts with the specimen surface. In contact mode, the tip maintains continuous contact with the specimen throughout scanning. In intermittent contact mode, the tip oscillates and intermittently touches the specimen surface. In non-contact mode, the tip does not touch the specimen at all during scanning [36-40].

Principle of Atomic Force Microscope:

The Atomic Force Microscope (AFM) is an advanced method for imaging and analyzing the surface morphology and properties of materials at the nanoscale. It operates on the principle of detecting surface features through the interaction between a sharp probe tip and the sample surface, offering high-resolution visualization and characterization capabilities.
a) Cantilever Probe: At the core of an AFM lies a miniature cantilever outfitted with a sharp probe tip at one end. This probe tip, often composed of silicon or silicon nitride and typically a few nanometers in radius, is crucial for interactions with the sample surface. The cantilever itself, also typically made from silicon or silicon nitride, functions as a delicate spring that bends in response to forces exerted between the probe tip and the sample surface.

Instrumentation of Atomic Force Microscopy:

a) Cantilever Assembly: At the core of the AFM is the cantilever assembly, comprising a sharp probe tip connected to a flexible cantilever. The probe tip is commonly crafted from silicon or silicon nitride and can take various shapes like conical, pyramidal, or spherical. The cantilever functions as a responsive spring that bends in reaction to forces exerted between the probe tip and the sample surface.
b) Laser Deflection System: A laser beam is aimed at the rear of the cantilever, and its reflected beam is captured by a position-sensitive photodetector. As the cantilever bends in response to interaction forces with the sample surface, the position of the reflected beam on the photodetector shifts, offering immediate feedback on the cantilever’s deflection.
c) Feedback Electronics: Feedback electronics are used to regulate the vertical position of the cantilever, ensuring a consistent force or distance between the probe tip and the sample surface throughout the scanning process.
d) Piezoelectric Scanner: The sample stage is installed on a piezoelectric scanner, providing accurate control over the sample’s position in relation to the probe tip. This scanner can move the sample with nanometer-scale precision along the x, y, and z axes, facilitating raster scanning of the probe tip across the sample surface to produce detailed, high-resolution images.
e) Control and Data Acquisition System: An AFM operates with a control and data acquisition system to manage scanning parameters, operate the instrument, and gather data from sensors like the photodetector. This system usually integrates software for image acquisition, processing, and analysis, alongside hardware components such as analog-to-digital converters (ADCs) and digital signal processors (DSPs).
f) Environmental Control: Some AFM systems are equipped with environmental control features to minimize vibration, temperature fluctuations, and humidity changes that can affect imaging performance.
g) Optional Accessories: Depending on the specific application, additional accessories may be incorporated into the AFM setup. These can include liquid cells for imaging in liquid environments, heating or cooling stages for temperaturedependent studies, and specialized imaging modes such as magnetic force microscopy (MFM) or electrostatic force microscopy (EFM) (Figure 5).


Advantage of Atomic Force Microscope:

a) High Resolution: AFM can achieve atomic-scale resolution, allowing researchers to study surface topography and features with unprecedented detail. This makes it a valuable tool for investigating nanoscale structures, including individual atoms and molecules.
b) Versatility: AFM can operate in various modes, including contact mode, tapping mode, and dynamic mode, allowing for a wide range of imaging and measurement techniques. It can also be used to study diverse sample types, including solid surfaces, biomolecules, polymers, and thin films.
c) Non-destructive Imaging: Unlike some microscopy techniques that require staining or labeling, AFM can image samples in their native state without damaging or altering them. This non-destructive nature makes it particularly useful for studying delicate or sensitive samples.
d) 3D Imaging: AFM can generate three-dimensional images of sample surfaces, providing valuable information about surface morphology, roughness, and topography. This capability is essential for understanding the spatial organization and properties of nanoscale structures.
e) Measurement Capabilities: In addition to imaging, AFM can perform various measurements, including force spectroscopy, adhesion measurements, mechanical properties mapping, and electrical characterization. These capabilities make it a versatile tool for studying material properties and interactions at the nanoscale.
f) Operational Flexibility: AFM can operate in different environments, including air, liquid, and vacuum, allowing for the study of samples under a wide range of conditions. This flexibility enables researchers to investigate biological samples, polymers, and other materials in their native environments.
g) High Sensitivity: AFM is highly sensitive to small forces, making it suitable for detecting subtle interactions between the tip and sample surface. This sensitivity enables the study of weak forces such as van der Waals forces, chemical bonding, and molecular interactions.
h) Real-Time Imaging and Manipulation: Some AFM systems offer real-time imaging capabilities, allowing researchers to observe dynamic processes as they unfold. Additionally, AFM can be used for nano-manipulation tasks, such as pushing, pulling, and positioning individual atoms or molecules on a surface.

Limitation of Atomic Force Microscope:

a) Limited Speed: AFM imaging typically operates at relatively slow scan speeds compared to other microscopy techniques such as scanning electron microscopy (SEM) or optical microscopy. This limitation can be particularly significant when studying dynamic processes or large sample areas.
b) Sample Constraints: AFM requires samples to be relatively flat and stable to achieve high-resolution imaging. Samples with rough surfaces or soft materials may present challenges or require specialized techniques for imaging. Additionally, AFM is primarily suited for studying solid or semisolid materials and may not be suitable for analyzing liquids or gases directly.
c) Sample Artifacts: Sample preparation for AFM can introduce artifacts, especially when imaging soft or biological samples. Sample drying, flattening, or surface modifications can alter the sample’s native structure and properties, leading to inaccurate or misleading results.
d) Tip Wear and Contamination: The AFM tip can wear out or become contaminated over time, affecting imaging quality and resolution. Tip degradation can lead to imaging artifacts and require frequent tip replacement or cleaning, increasing experimental costs and downtime.
e) Limited Imaging Modes: While AFM offers various imaging modes (e.g., contact mode, tapping mode, dynamic mode), each mode has its own limitations and trade-offs.
f) Environmental Sensitivity:AFM performance can be sensitive to environmental conditions such as temperature, humidity, and vibration. Maintaining stable experimental conditions is crucial for obtaining reproducible and reliable results, especially for long-term or high-resolution imaging experiments.
g) Complex Data Analysis: AFM data analysis can be complex, requiring specialized software and expertise to interpret and quantify imaging results accurately. Extracting meaningful information from AFM images often involves processing large datasets, filtering noise, and performing advanced image analysis algorithms.

Scanning Tunneling Microscope:

STM detects the flow of electrons through quantum tunneling between the tip and the sample, generating high-resolution images of surface topography with atomic-scale precision [41-42].

Principle of Scanning Tunneling Microscope:

The Scanning Tunneling Microscope (STM) functions based on quantum tunneling, a phenomenon in quantum mechanics where a particle can pass through a potential energy barrier despite lacking sufficient classical energy. In STM, a sharp conducting tip is positioned very close to the sample surface. By applying a small bias voltage between the tip and the sample, electrons can tunnel through the vacuum gap separating them.
a) Tip and Sample Interaction: The STM comprises a sharp metallic tip mounted on a piezoelectric scanner and a conductive sample. The tip is positioned within an extremely close distance, typically a few angstroms, from the sample surface.
b) Quantum Tunneling: When a small bias voltage (usually ranging from a few millivolts to a few volts) is applied between the tip and the sample in an STM, electrons have the ability to tunnel through the vacuum gap separating them. The likelihood of tunneling exponentially correlates with the width of this gap.
c) Current Measurement: A feedback loop is employed to sustain a constant current (typically ranging from a few picoamperes) by adjusting the tip-sample distance during scanning. Variations in the tunneling current are utilized to map the surface topography with atomic-scale resolution.
d) Topographic Imaging: As the tip moves across the sample surface, changes in the tunneling current occur because of variations in the distance between the tip and sample surface induced by surface features. These fluctuations are utilized to create a topographic image of the sample surface.
e) Atomic Resolution: Since the tunneling current is highly sensitive to the tip-sample distance, the STM can achieve atomic resolution by precisely controlling this distance. This allows researchers to visualize individual atoms and molecular structures on the sample surface.

Instrumentation of Scanning Tunneling Microscope:

a) Probe Tip: The heart of the STM is a sharp metallic probe tip, typically made of tungsten or platinum-iridium, with a radius of a few atoms. The tip is mounted on a flexible cantilever and brought into close proximity to the sample surface.
b) Piezoelectric Scanner: The sample stage is mounted on a piezoelectric scanner, which allows for precise control of the position of the sample relative to the probe tip. The scanner can move the sample in the x, y, and z directions with nanometer-scale precision, enabling raster scanning of the probe tip across the sample surface to generate high-resolution images.
c) Feedback Control System: A feedback control system is used to maintain a constant tunneling current between the probe tip and the sample surface during scanning. This feedback loop adjusts the vertical position of the probe tip by moving the piezoelectric scanner up or down to keep the tunneling current constant.
d) Electronics and Amplifiers: Electronics and amplifiers are used to measure the tunneling current between the probe tip and the sample surface. The tunneling current is typically in the range of picoamperes to Nano amperes and requires sensitive amplifiers to detect.
e) Voltage Source: A voltage source is used to apply a bias voltage between the probe tip and the sample surface, which controls the tunneling current. By adjusting the bias voltage, researchers can change the height of the tunneling barrier and thus the sensitivity of the STM to surface features.
f) Control and Data Acquisition System: A control and data acquisition system is used to operate the STM, control scanning parameters, and acquire data from the tunneling current measurements. This system typically includes software for image acquisition, processing, and analysis, as well as hardware components such as analog-to-digital converters (ADCs) and digital signal processors (DSPs).
g) Environmental Control: Some STM systems are equipped with environmental control features to minimize vibration, temperature fluctuations, and humidity changes that can affect imaging performance. This may include vibration isolation tables, temperature-controlled enclosures, and vacuum chambers (Figure 6).


Advantage of Scanning Tunneling Microscope:

a) Atomic Resolution: The STM provides atomic-scale resolution, allowing researchers to visualize individual atoms and molecules on surfaces. This level of detail is essential for studying surface structures, defects, and chemical bonding at the atomic level.
b) Versatility: STM can be used to study a wide range of materials, including metals, semiconductors, insulators, and biological samples. It is particularly well-suited for analyzing conducting or semiconducting surfaces due to its reliance on tunneling current.
c) Non-destructive Imaging: STM imaging is nondestructive, as it relies on the quantum mechanical tunneling of electrons rather than physical interaction with the sample surface. This allows researchers to image samples in their native state without altering their structure or properties.
d) High Sensitivity: STM is highly sensitive to changes in tip-sample distance, making it capable of detecting subtle variations in surface topography and electronic properties. This sensitivity enables the detection of atomic-scale features and surface defects with high precision.
e) Real-time Imaging: STM can provide real-time imaging of sample surfaces, allowing researchers to observe dynamic processes as they occur. This capability is particularly valuable for studying surface reactions, growth processes, and surface diffusion phenomena.
f) Manipulation and Nanolithography: STM can be used for precise manipulation of atoms and molecules on surfaces through a technique known as scanning tunneling spectroscopy. This enables researchers to create nanostructures, manipulate individual atoms, and study the properties of nanoscale devices.
g) Operational Flexibility: STM can operate in various environments, including ultra-high vacuum, ambient conditions, and liquid environments. This flexibility allows researchers to study samples under conditions relevant to specific applications, such as catalysis, corrosion, and biological processes. Quantitative Analysis: STM can provide quantitative measurements of surface properties, including surface roughness, height profiles, and electronic density of states. These measurements are valuable for characterizing material properties and understanding surface phenomena at the atomic scale.

Limitation of Scanning Tunneling Microscope:

a) Conducting Sample Requirement: STM requires the sample to be conductive or semi-conductive. Insulating samples cannot be imaged directly using STM unless they are coated with a conductive layer, which can alter their properties or introduce artifacts.
b) Sample Preparation: Sample preparation for STM can be challenging and time-consuming. Samples must be clean, flat, and stable to achieve high-quality imaging, and preparation techniques such as cleaving, annealing, or deposition may be required.
c) Limited Depth of Field: STM has a limited depth of field, meaning that only surface features within a narrow range of heights are in focus at any given time.
d) Tip Wear and Contamination: The STM tip can wear out or become contaminated over time, affecting imaging quality and resolution. Tip degradation can lead to imaging artifacts and require frequent tip replacement or cleaning, increasing experimental costs and downtime.
e) Vibration Sensitivity: STM is sensitive to mechanical vibrations, which can degrade imaging quality and resolution.
f) Limited Scanning Area: The scanning area of STM is relatively small compared to other microscopy techniques. Largearea imaging require stitching together multiple scans, which is time-consuming and introduce alignment errors.
g) Temperature Sensitivity: STM performance can be affected by temperature variations, particularly at cryogenic temperatures or in environments with temperature gradients. Temperature stabilization measures may be required for accurate and reproducible imaging.
h) Low Imaging Speed: STM imaging typically operates at relatively slow scan speeds compared to other microscopy techniques such as scanning electron microscopy (SEM) or atomic force microscopy (AFM). This limitation can be particularly significant when studying dynamic processes or large sample areas.

Scanning Near-field Optical Microscope (SNOM or NSOM): Principle of Scanning Near-field Optical Microscope:

The SNOM or NSOM operates on the principle of exploiting the near-field interaction between a sharp probe and a sample surface to achieve sub-diffraction-limited optical resolution. Unlike conventional optical microscopy, which is limited by the diffraction of light, SNOM utilizes the evanescent optical field that extends beyond the optical diffraction limit [43-46].

Sharp Probe Tip: SNOM employs a sharp probe tip, typically tapered to a nanometer-scale aperture, that is scanned across the sample surface. The probe tip acts as a nano-sized optical antenna, interacting with the near-field optical signals emanating from the sample.
a) Evanescent Near-field Interaction: When the probe tip is positioned close to the sample surface (within a distance on the order of the wavelength of light), it interacts with the evanescent optical field that extends beyond the surface. This interaction results in changes to the probe’s optical properties, such as transmission, reflection, or scattering.
b) Detection of Optical Signals: The optical signals modified by the near-field interaction are detected and analyzed to generate images or spectroscopic data. Various detection methods can be employed, including collection-mode SNOM (measuring transmitted or reflected light) or illuminationmode SNOM (illuminating the sample through the probe tip and detecting scattered light).
c) Scanning Probe Operation: The probe tip is scanned across the sample surface in a raster pattern using precise positioning mechanisms. By recording the optical signals at each position, a high-resolution optical image or map of the sample’s optical properties is generated.
d) Sub-diffraction-limited Resolution: The spatial resolution of SNOM is determined by the dimensions of the probe tip and its proximity to the sample surface, rather than the wavelength of light. This allows SNOM to achieve optical resolution beyond the diffraction limit, with lateral resolutions down to tens of nanometers or even below.

Instrumentation of Scanning Near Field Optical-Microscope:

a) Optical Fiber Probe: The heart of the SNOM is a tapered optical fiber probe, typically made of silica or other dielectric materials. The probe tip is tapered to a sharp point with dimensions on the order of the wavelength of light. The probe acts as both an illumination source and a near-field detector for optical signals.
b) Cantilever Assembly: The optical fiber probe is mounted on a flexible cantilever, similar to those used in Atomic Force Microscopy (AFM). The cantilever allows for precise positioning of the probe tip relative to the sample surface and enables scanning in the x, y, and z directions.
c) Piezoelectric Scanner: The sample stage is mounted on a piezoelectric scanner, which allows for precise control of the position of the sample relative to the probe tip. The scanner can move the sample in the x, y, and z directions with nanometer-scale precision, enabling raster scanning of the probe tip across the sample surface to generate high-resolution images.
d) Feedback Control System: A feedback control system is used to maintain a constant distance between the probe tip and the sample surface during scanning. This feedback loop adjusts the vertical position of the probe tip by moving the piezoelectric scanner up or down to keep the near-field interaction constant.
e) Optical Source: An optical source, typically a laser, is used to illuminate the sample surface through the optical fiber probe. The laser light is coupled into the probe and focused to a diffraction-limited spot at the probe tip, creating a highly localized optical field near the sample surface.
f) Optical Detection System: Light scattered or emitted from the sample surface is collected by the probe tip and guided back through the optical fiber to a detector. The detector measures the intensity, polarization, wavelength, or other optical properties of the collected light, providing information about the sample’s optical properties and surface features.
g) Control and Data Acquisition System: A control and data acquisition system is used to operate the SNOM, control scanning parameters, and acquire data from the detector. This system typically includes software for image acquisition, processing, and analysis, as well as hardware components such as analog-to-digital converters (ADCs) and digital signal processors (DSPs).
h) Environmental Control: Some SNOM systems are equipped with environmental control features to minimize vibration, temperature fluctuations, and humidity changes that can affect imaging performance. This may include vibration isolation tables, temperature-controlled enclosures, and vacuum chambers (Figure 7).

Figure 4 shows the distribution of socio-economic impacts on forest-dependent communities, including displacement, poverty increase, and loss of cultural heritage [34].


Advantage of Scanning Near Field Optical-Microscope:

a) Sub-diffraction-limited Resolution: SNOM can achieve optical resolution beyond the diffraction limit of light, allowing for imaging and spectroscopy at the nanometer scale. This enables researchers to study optical properties and structures with unprecedented detail.
b) Nanoscale Optical Imaging: SNOM provides highresolution optical imaging of nanoscale features, including surface plasmon polarities, photonic nanostructures, and biological samples.
c) Real-time Imaging: SNOM can provide real-time imaging of dynamic processes at the nanoscale, allowing researchers to observe rapid changes in optical properties or sample morphology as they occur.
d) Surface Sensitivity: SNOM is highly sensitive to changes in the local optical properties of the sample surface, such as refractive index variations, absorption, and fluorescence. This sensitivity enables the detection of subtle surface features and optical phenomena that may not be observable with conventional optical microscopy techniques.
e) Multimodal Imaging and Spectroscopy: SNOM can be combined with other imaging and spectroscopy techniques, such as atomic force microscopy (AFM), fluorescence microscopy, and Raman spectroscopy, to provide complementary information about sample properties.
f) Non-destructive Imaging: SNOM imaging is nondestructive, as it does not require staining or labeling of samples.
g) Versatility: SNOM can be used to study a wide range of materials and sample types, including semiconductors, metals, polymers, Nano photonics, plasmonics, Biosensing and biological samples.

Limitation of Scanning Near-field Optical Microscope:

a) Complex Probe Fabrication: SNOM probes require precise fabrication to produce sharp tips with nanometer-scale apertures. Fabrication methods such as electrochemical etching or focused ion beam milling can be time-consuming and may result in variability between probes, affecting imaging quality and reproducibility.
b) Limited Signal Collection Efficiency: SNOM typically collects only a small fraction of the total emitted or scattered light from the sample surface. This limited collection efficiency can result in low signal-to-noise ratios, especially for weakly emitting or scattering samples, making it challenging to obtain high-quality images or spectroscopic data.
c) Probe-sample Interaction: The interaction between the SNOM probe tip and the sample surface can influence the measured optical signals and introduce artifacts. Tip-sample interactions, such as tip-induced sample deformation or surface modification, may alter the sample’s optical properties and affect imaging accuracy.
d) Tip Wear and Degradation: SNOM probe tips can wear out or become contaminated during scanning, leading to changes in probe geometry and optical properties. Tip degradation can degrade imaging resolution and sensitivity, necessitating frequent probe replacement or cleaning.
e) Sample Preparation Requirements: SNOM imaging often requires samples to be flat, clean, and optically smooth to achieve high-quality results. Sample preparation techniques, such as surface polishing or coating, may alter the sample’s native properties or introduce artifacts that affect imaging accuracy.
f) Limited Imaging Speed: SNOM imaging typically operates at relatively slow scan speeds compared to other microscopy techniques. This limitation can be particularly significant for large-area imaging or time-resolved experiments, where long acquisition times may be required.
g) Environmental Sensitivity: SNOM performance can be sensitive to environmental conditions such as temperature, humidity, and vibrations. Maintaining stable experimental conditions is crucial for obtaining reproducible and reliable imaging results.

Scanning Electron Microscope (SEM) with a Field Emission Gun (FEG):

The Scanning Electron Microscope (SEM) with a Field Emission Gun (FEG) represents a significant advancement in electron microscopy technology. The development of FEG-SEM traces back to the mid-20th century when field emission electron sources were first proposed and studied [47-49].

Principle of Scanning Electron Microscope with Field Emission Gun:

a) Field Emission Electron Source: The FEG utilizes a sharp tungsten or other refractory metal tip with a nanometerscale apex. Applying a high electric field to the tip causes electrons to be emitted from its surface via the quantum mechanical tunneling phenomenon known as field emission.
b) Highly Focused Electron Beam: The emitted electrons form a highly collimated beam due to the small size of the emitter tip and the strong electric field. This focused electron beam is then accelerated and directed towards the sample surface.
c) Sample Interaction: When the electron beam interacts with the atoms in the sample, various phenomena occur, including elastic and inelastic scattering, secondary electron emission, backscattered electron emission, and X-ray emission. These interactions depend on the sample’s atomic number, density, and composition.
d) Detection of Signals: Various detectors within the SEM capture signals resulting from interactions between the electron beam and the sample. Secondary electrons, backscattered electrons, and X-rays are commonly detected and used for imaging or compositional analysis of the sample.
e) Scanning and Imaging: The electron beam scans across the sample surface in a raster pattern using electromagnetic or scanning coils. At each position, the detected signals are processed to generate an image of the sample surface. Precise control over beam position and intensity enables high-resolution imaging of sample morphology.
f) Resolution and Imaging Modes: FEG-SEM typically achieves sub-nanometer resolution, facilitating detailed imaging of surface features. Different imaging modes, such as secondary electron imaging, backscattered electron imaging, and energydispersive X-ray spectroscopy (EDS), provide complementary information on sample composition, topography, and material contrast (Figure 8).


Advantage of Scanning Electron Microscope with Field Emission Gun:/

a) Improved Resolution: FEG-SEM typically achieves higher resolution than conventional SEMs due to the smaller electron source size and higher beam brightness. This allows for the visualization of finer surface features and the imaging of nanoscale structures with sub-nanometer resolution.
b) Enhanced Beam Brightness: FEG-SEM produces a highly focused and intense electron beam with a small source size, resulting in increased beam brightness. This improved brightness enables sharper imaging, higher signal-to-noise ratios, and better sensitivity for detecting low-energy secondary electrons and X-rays.
c) Higher Spatial Resolution at Low Beam Energies: FEG-SEM can achieve high spatial resolution even at low beam energies, making it suitable for imaging sensitive or beamsensitive samples. This capability is particularly advantageous for studying biological specimens, polymers, and nanomaterials without causing sample damage or beam-induced artifacts.
d) Reduced Beam Damage: The high beam brightness and small probe size of FEG-SEM result in reduced beam damage to the sample compared to conventional SEMs. This allows for longer imaging times and repeated imaging of the same area without significant sample degradation, making FEG-SEM suitable for long-term studies and in-situ experiments.
e) Improved Depth of Field: FEG-SEM exhibits improved depth of field compared to conventional SEMs, allowing for clearer imaging of samples with uneven or rough surfaces. This enables the visualization of three-dimensional surface structures and topographies with greater clarity and detail.
f) Versatility in Imaging Modes: FEG-SEM offers versatile imaging modes, including secondary electron imaging, backscattered electron imaging, and compositional analysis using energy-dispersive X-ray spectroscopy (EDS). This flexibility allows researchers to obtain complementary information about sample morphology, composition, and material contrast in a single instrument.
g) Increased Stability and Reliability: FEG-SEM systems are often designed with advanced stability mechanisms and vacuum systems, resulting in improved instrument reliability and uptime. This ensures consistent performance and high-quality imaging over extended periods of operation.

Limitation of Scanning Electron Microscope with Field Emission Gun:

a) Complexity: FEG-SEM systems are more complex in design and operation compared to conventional SEMs. The integration of a field emission electron source requires sophisticated engineering and control systems, leading to increased complexity in instrument setup, maintenance, and troubleshooting.
b) High Vacuum Requirement: FEG-SEM systems operate under high vacuum conditions to maintain electron beam stability and minimize electron scattering. Achieving and maintaining high vacuum levels can be challenging and may require specialized vacuum pumps and stringent cleanliness protocols.
c) Beam Instability: Despite their improved beam brightness, FEG-SEM systems may still experience beam instability due to factors such as electronic noise, thermal fluctuations, or mechanical vibrations. Beam instability can result in image drift, reduced imaging resolution, and decreased data quality.
d) Sample Charging: FEG-SEM imaging can be susceptible to sample charging effects, particularly when imaging insulating materials or non-conductive samples. Sample charging can lead to image distortions, artifacts, and difficulties in obtaining accurate surface topography.
e) Beam-induced Damage: While FEG-SEM systems produce a highly focused electron beam, prolonged exposure to the beam can still cause sample damage, particularly for beamsensitive materials. Beam-induced heating, radiation damage, and surface contamination can affect sample integrity and introduce artifacts in imaging.
f) Limited Depth of Field: FEG-SEM imaging typically exhibits a limited depth of field, particularly at high magnifications and low beam energies. This can make it challenging to obtain clear images of samples with complex topographies or large height variations.

Scanning Kelvin Probe Microscope (SKPM):

The Scanning Kelvin Probe Microscope (SKPM) has its roots in the Kelvin probe technique, which was first developed in the 19th century by Lord Kelvin to measure the work function of metals.

Principle of Scanning Kelvin Probe Microscope:

The Scanning Kelvin Probe Microscope (SKPM) measures the surface potential of a sample by scanning a conductive probe tip at a constant height above the sample surface, applying a small alternating current (AC) bias voltage in the process table.
Conductive Probe Tip: The SKPM probe tip is typically made of a conductive material such as metal-coated silicon or conducting diamond. It is brought into close proximity to the sample surface, maintaining a constant height during scanning.
a) Small AC Bias Voltage: A small AC bias voltage, typically in the millivolt range, is applied between the probe tip and the sample surface. This voltage creates an electric field between the probe and the sample, leading to charge redistribution on the sample surface.
b) Detection of Electrostatic Force: As the probe scans over the sample surface, fluctuations in the surface potential cause variations in the electrostatic force between the probe tip and the sample. These force changes are observed by monitoring the deflection of the probe or measuring the capacitance between the probe and the sample.
c) Feedback Control: A feedback loop is used to sustain a consistent force or capacitance between the probe tip and the sample surface by modifying the DC bias voltage applied to the probe. The amount of DC bias voltage needed to maintain this constancy is directly related to the surface potential of the sample at each location.
d) Surface Potential Mapping: By documenting the DC bias voltage at each position while the probe scans the sample surface, a surface potential map is created. This map offers insights into variations in surface charge distribution, work function, and electrical characteristics of the sample on a nanometer scale.

Instrumentation of Scanning Kelvin Probe Microscope:

a) Probe Tip Assembly: The key component of the SKPM is the probe tip assembly, which typically consists of a sharp metallic tip attached to a cantilever. The probe tip is made of a conductive material such as gold or platinum and is brought into close proximity to the sample surface during imaging.
b) Cantilever and Scanner: The probe tip assembly is mounted on a flexible cantilever, similar to those used in Atomic Force Microscopy (AFM). The cantilever allows for precise positioning of the probe tip relative to the sample surface and enables scanning in the x, y, and z directions. A piezoelectric scanner controls the movement of the sample stage to facilitate raster scanning of the probe tip across the sample surface.
c) Feedback Control System: A feedback control system is used to maintain a constant distance between the probe tip and the sample surface during scanning. This feedback loop adjusts the vertical position of the probe tip by moving the piezoelectric scanner up or down to keep the force between the tip and the sample constant.
d) Kelvin Probe: The Kelvin probe is used to measure the contact potential difference (CPD) between the probe tip and the sample surface. The Kelvin probe typically consists of a reference electrode and a sample electrode, with the CPD being proportional to the difference in work function between the two electrodes.
e) AC Biasing System: The SKPM applies an AC bias voltage between the probe tip and the sample surface to measure variations in surface potential.
f) Lock-In Amplifier: A lock-in amplifier is used to detect and measure the AC component of the current flowing between the probe tip and the sample surface. The lock-in amplifier synchronizes with the AC bias voltage to selectively measure the signal at the modulation frequency, providing a highly sensitive measurement of the CPD.
g) Control and Data Acquisition System: A control and data acquisition system is used to operate the SKPM, control scanning parameters, and acquire data from the lock-in amplifier. This system typically includes software for image acquisition, processing, and analysis, as well as hardware components such as analog-to-digital converters (ADCs) and digital signal processors (DSPs).
h) Environmental Control: Some SKPM systems are equipped with environmental control features to minimize vibration, temperature fluctuations, and humidity changes that can affect imaging performance. This may include vibration isolation tables, temperature-controlled enclosures, and vacuum chambers (Figure 9).


Advantage of Scanning Kelvin Probe Microscope:

a) Surface Potential Mapping: SKPM provides highresolution mapping of surface potential variations on a sample surface. This capability allows researchers to visualize and quantify surface charge distribution, work function differences, and electrical properties with nanometer-scale spatial resolution.
b) Non-destructive Measurement: SKPM measurements are non-destructive and non-invasive, as they do not require physical contact with the sample surface. This allows for the characterization of delicate or sensitive materials without altering their properties or inducing damage.
c) Quantitative Analysis: SKPM enables quantitative measurement of surface potential values, providing precise information about the electrical properties of materials. This quantitative analysis is valuable for studying charge transport mechanisms, surface reactivity, and device performance.
d) High Sensitivity: SKPM is highly sensitive to changes in surface potential, making it capable of detecting subtle variations in charge distribution and work function. This sensitivity allows for the detection of surface defects, dopant concentrations, and interface properties at the nanoscale.
e) Multi-modal Imaging: SKPM can be combined with other scanning probe microscopy techniques, such as atomic force microscopy (AFM), to provide complementary information about sample morphology, mechanical properties, and surface potential simultaneously. This multimodal imaging approach enhances the understanding of structure-property relationships in materials.
f) Versatility: SKPM can be applied to a wide range of materials, including semiconductors, metals, polymers, and biological samples.
g) In-situ and Operando Studies: SKPM can be used for in-situ and operando studies, allowing researchers to investigate dynamic processes, such as surface reactions, charge transfer, and device operation, in real-time. This capability is valuable for understanding the kinetics and mechanisms of surface phenomena [50-52].

Limitation of Kelvin Probe Microscope:

a) Surface Sensitivity: SKPM measurements are sensitive to surface contamination, roughness, and non-uniformities, which can affect the accuracy and reliability of surface potential mapping. Surface preparation and cleanliness are critical for obtaining meaningful results.
b) Sample Conductivity Requirement: SKPM requires samples to be at least semi-conductive or electrically grounded to obtain accurate surface potential measurements. Insulating samples may exhibit charge accumulation or surface charging effects, leading to inaccurate results or image artifacts.
c) Complexity of Interpretation: Interpreting SKPM data and extracting meaningful information about sample properties can be challenging, particularly for heterogeneous or complex materials. Calibration procedures, data analysis algorithms, and model assumptions may introduce uncertainties in surface potential measurements.
d) Limited Depth Sensitivity: SKPM is inherently a surface-sensitive technique, with limited depth penetration into the sample. It provides information about the surface potential but does not provide depth-resolved measurements of subsurface layers or buried interfaces.
e) Topography Coupling: Surface topography variations can affect SKPM measurements by modulating the probe-sample distance and influencing the electrostatic force between the probe tip and the sample. Proper compensation and correction methods are required to decouple surface potential from surface topography effects.
f) Tip-sample Interaction: SKPM measurements can be influenced by tip-sample interactions, such as tip-induced surface deformation or sample damage. Careful selection of probe tip materials, tip geometries, and imaging parameters is necessary to minimize tip-sample interactions and preserve sample integrity.
g) Environmental Sensitivity: SKPM performance may be sensitive to environmental conditions such as temperature, humidity, and atmospheric gases. Controlling environmental factors and maintaining stable experimental conditions are essential for reproducible and reliable measurements.

Scanning Capacitance Microscope:

Scanning Capacitance Microscopy (SCM) emerged in 1989 when David P. Pulfrey and colleagues combined atomic force microscopy (AFM) with capacitance sensing, pioneering a technique to map electrical properties at the nanoscale. Initially used to study semiconductor devices, SCM’s scope has expanded to materials science and failure analysis. In modern SCM instruments, a conductive tip scans the sample surface, measuring local capacitance variations induced by charges. These variations are then translated into high-resolution maps of carrier concentration, doping profiles, and electric field gradients [53- 55].

Principle of Scanning Capacitance Microscope:

a) Capacitance Sensing: When a conductive tip nears a semiconductor surface, it forms a capacitor with the underlying material. The capacitance of this setup is influenced by the dielectric properties of the material and the distance between the tip and the sample surface.
b) Variation in Capacitance: As the tip scans the sample surface, the local capacitance changes due to variations in the electrical properties of the underlying material. These variations can be caused by differences in carrier concentration, doping profiles, defects, or electric field gradients.
c) Detection and Imaging: The Scanning Capacitance Microscopy (SCM) detects these capacitance variations by applying a small AC voltage to the conductive tip and measuring the resulting AC current. By keeping a constant tip-sample distance, the SCM generates a topographic image of the sample surface while simultaneously mapping the local capacitance changes.
d) Data Analysis: The measured capacitance variations are processed to generate high-resolution maps of carrier concentration, doping profiles, and electric field gradients on the sample surface.

Instrumentation of Scanning Capacitance Microscope:

a) Probe Tip Assembly: The essential component of Scanning Capacitance Microscopy (SCM) is the probe tip assembly, typically consisting of a sharp metallic tip attached to a cantilever. This conductive tip, often made of materials like tungsten or platinum, is brought very close to the sample surface during imaging.
b) Cantilever and Scanner: Like other scanning probe microscopy techniques, the probe tip assembly in SCM is mounted on a flexible cantilever, enabling precise positioning of the tip relative to the sample surface. Movement of the sample stage is controlled by a piezoelectric scanner, facilitating raster scanning of the probe tip across the sample surface.
c) Feedback Control System: During scanning, a feedback control system is employed to keep a constant distance between the probe tip and the sample surface. This system adjusts the vertical position of the probe tip by moving the piezoelectric scanner up or down, ensuring the force between the tip and the sample remains consistent.
d) AC Biasing System: The SCM applies an AC bias voltage between the probe tip and the sample surface to measure variations in capacitance. The AC bias voltage typically has a frequency in the range of tens to hundreds of kilohertz, allowing for sensitive detection of changes in capacitance.
e) Capacitance Detection System: The SCM measures the capacitance between the probe tip and the sample surface using a capacitance detection system. This system typically includes a lock-in amplifier, which synchronizes with the AC bias voltage to selectively measure the signal at the modulation frequency, providing a highly sensitive measurement of capacitance.
f) Control and Data Acquisition System: A control and data acquisition system is used to operate the SCM, control scanning parameters, and acquire data from the capacitance detection system. This system typically includes software for image acquisition, processing, and analysis, as well as hardware components such as analog-to-digital converters (ADCs) and digital signal processors (DSPs).
g) Environmental Control: Some SCM systems are equipped with environmental control features to minimize vibration, temperature fluctuations, and humidity changes that can affect imaging performance. This may include vibration isolation tables, temperature-controlled enclosures, and vacuum chambers. Scanning Capacitance Microscope is diagrammatically shown in Figure 10.


Advantage of Scanning Capacitance Microscopy:

a) High Spatial Resolution: SCM provides nanometerscale resolution, allowing for the imaging and characterization of semiconductor devices and materials at the atomic or molecular level. This high spatial resolution is crucial for understanding the local variations in carrier concentration, doping profiles, and electric field gradients.
b) Non-destructive Characterization: SCM is a nondestructive technique that does not require sample preparation or alteration. It enables researchers and engineers to study semiconductor devices and materials without damaging them, making it suitable for both research and manufacturing applications.
c) Quantitative Analysis: Modern SCM systems are equipped with advanced data analysis software that enables quantitative analysis of SCM images. This software allows for the extraction of key parameters such as carrier concentration, doping profiles, and depletion widths from SCM data, providing valuable insights into the electrical properties of semiconductor materials.
d) Versatility: SCM can be used to study a wide range of semiconductor materials and devices, including transistors, diodes, integrated circuits, and thin films. It is applicable to various semiconductor materials such as silicon, gallium arsenide, and silicon carbide, making it a versatile tool in semiconductor research and manufacturing.
e) In-line Monitoring: SCM can be integrated with semiconductor manufacturing equipment for in-line monitoring of device properties during fabrication processes.

Limitations of Scanning Capacitance Microscope:

a) Surface Sensitivity: SCM is highly sensitive to the surface topography and cleanliness of the sample. Surface roughness and contamination can affect the accuracy and reliability of SCM measurements, potentially leading to artifacts in the obtained images.
b) Sample Preparation: Sample preparation for SCM can be time-consuming and challenging, especially for non-planar or heavily doped semiconductor structures. Achieving a flat and clean sample surface is essential for obtaining accurate SCM measurements.
c) Calibration Requirements: Proper calibration of SCM systems is crucial for obtaining quantitative measurements of carrier concentration and doping profiles. Calibration typically involves reference samples with known doping profiles, which may not always be readily available or representative of the sample being studied.
d) Limited Depth Sensitivity: SCM primarily probes the near-surface region of the sample, typically within a few nanometers of the surface. This limited depth sensitivity restricts the ability to characterize buried features or interfaces within semiconductor devices, such as buried junctions or interfaces between different materials.
e) Complex Data Analysis: Interpretation of SCM data can be complex, particularly for heterogeneous or multi-layered semiconductor structures. Extracting meaningful information from SCM images often requires advanced data analysis techniques and modeling to account for factors such as tip-sample interactions and material properties.

Scanning Thermal Microscopy:

Scanning Thermal Microscopy (SThM) emerged in the late 1980s, pioneered by researchers like Stephen Quake and Joseph Stroscio. SThM combines scanning probe microscopy (SPM) with a thermal probe to map variations in temperature at the nanoscale. Initially used to study thermal properties of materials, SThM’s scope has expanded to include heat dissipation in electronic devices, phase transitions, and thermal conductivity measurements [56-60].

Principle of Scanning Thermal Microscope:

a) Thermal Probe: The heart of the SThM is a tiny thermal probe, usually made of a material with high thermal sensitivity, such as a fine metal wire or a carbon nanotube. This probe serves as both a heater and a thermometer.
b) Thermal Exchange: When the thermal probe comes into contact with the sample surface, heat is exchanged between the probe and the sample due to their temperature differences. This heat exchange induces a change in the electrical resistance or another measurable property of the probe.
c) Temperature Mapping: As the SThM scans the sample surface, the thermal probe measures local temperature variations. By correlating these variations with the probe’s position, a temperature map of the sample surface is generated.
d) Feedback Control: To maintain a constant temperature at the probe’s tip, feedback control mechanisms are employed. These mechanisms adjust the probe’s heating power based on the detected temperature changes, ensuring accurate temperature measurements.
e) Imaging and Analysis: The temperature map obtained by the SThM is typically visualized as a thermal image overlaid with topographic information obtained simultaneously using other SPM techniques, such as atomic force microscopy (AFM).

Instrumentation of Scanning Thermal Microscope:

a) Probe Tip Assembly: The essential part of the SThM is the probe tip assembly, usually comprising a sharp metallic tip connected to a cantilever. This tip is crafted from a material with high thermal conductivity, such as silicon or diamond, and is positioned very close to the sample surface during imaging.
b) Cantilever and Scanner: Similar to other scanning probe microscopy techniques, the probe tip assembly is mounted on a flexible cantilever, enabling precise positioning of the tip relative to the sample surface. A piezoelectric scanner manages the movement of the sample stage, allowing for raster scanning of the probe tip across the sample surface.
c) Feedback Control System: A feedback control system is employed to maintain a constant distance between the probe tip and the sample surface during scanning. This system adjusts the vertical position of the probe tip by moving the piezoelectric scanner up or down, ensuring that the force between the tip and the sample remains consistent.
d) Thermal Measurement System: The SThM measures the temperature of the sample surface using a variety of techniques. It can use a thermocouple or resistance temperature detector (RTD) embedded in the probe tip to directly measure the local temperature or infrared radiation detection or frequencydependent thermal analysis to indirectly measure temperature variations.
e) Thermal Control System: Some SThM systems incorporate a thermal control system to regulate the temperature of the probe tip or the sample surface during imaging. This may involve heating or cooling elements integrated into the probe tip assembly or the sample stage, as well as temperature feedback loops to maintain a constant temperature.
f) Control and Data Acquisition System: A control and data acquisition system is used to operate the SThM, control scanning parameters, and acquire data from the thermal measurement system. This system typically includes software for image acquisition, processing, and analysis, as well as hardware components such as analog-to-digital converters (ADCs) and digital signal processors (DSPs) (Figure 11).


Advantage of Scanning Thermal Microscope:

a) High Spatial Resolution: SThM provides nanoscale spatial resolution, allowing for the imaging and characterization of temperature variations with high precision. This capability is crucial for studying thermal properties at the micro- and nanoscale, where conventional thermometry techniques often struggle.
b) Localized Temperature Measurement: SThM enables localized temperature measurements, allowing researchers to study temperature gradients, hotspots, and thermal fluctuations with exceptional sensitivity.
c) Multi-Modal Imaging: SThM can be integrated with other scanning probe microscopy (SPM) techniques, such as atomic force microscopy (AFM), allowing for simultaneous imaging of topography and temperature which provides comprehensive insights into the correlation between surface morphology and thermal properties.
d) Non-destructive Characterization: SThM is a nondestructive technique that does not require sample preparation or alteration.
e) Wide Range of Application: It is used to characterize thermal properties of electronic devices, study heat dissipation in nanomaterials, investigate thermal conductivity of materials, and map temperature distributions in biological samples.

Limitations of Scanning Thermal Microscope:

Complexity of Calibration: Calibrating an SThM system can be challenging due to the need to establish a reliable correlation between the probe’s thermal properties and the measured signals. Achieving accurate and reproducible temperature measurements requires careful calibration procedures, often involving reference samples with known thermal properties.
a) Tip-Sample Interaction: The interaction between the thermal probe and the sample surface can affect temperature measurements, leading to uncertainties in the obtained data. Factors such as tip-sample contact area, thermal conductivity of the sample, and thermal coupling between the probe and the sample can influence the measured temperature values.
b) Limited Depth Sensitivity: SThM primarily probes the near-surface region of the sample, typically within a few nanometers of the surface.
c) Environmental Sensitivity: SThM measurements can be sensitive to environmental conditions such as temperature fluctuations, humidity, and air flow.
d) Sample Compatibility: SThM measurements may be challenging for samples with complex geometries, rough surfaces, or non-flat topographies. Achieving good thermal contact between the probe and the sample surface is crucial for accurate temperature measurements, which may be difficult to achieve for certain sample types.
e) Limited Throughput: SThM measurements typically require scanning over the sample surface point by point, which can be time-consuming, especially for large-area measurements or high-resolution imaging.

Conclusion

In the recent past there has been rapid change in the characterization techniques for biological and nanomaterials. Also, the existing technique has advanced due to adaptation of new technology. Today, many researchers are engaged in the research and development of nanomaterials. These materials have found applications in veterinary medicine, health, and agriculture. Since nanomaterials are beyond the perception of the human eye, it is crucial to have accurate characterization techniques for analyzing materials at the nanoscale. Thus, keeping this in mind we have tried to focus on the recent development in some of the important characterization techniques required in nanotechnology, biotechnology, veterinary sciences, health and pharmaceutical sciences. In the last section we have discussed various applications of materials at nanoscale especially their uses in veterinary science and agriculture. Overall the manuscript would be highly beneficial for the researchers, students and industrial persons working in nanoscience and technology.

Acknowledgment

The authors pay sincere tribute to Late Ms. Deepika Rai Dhirendra Prasad who suddenly left this world and lived a very short span of life. The authors fondly remember her on this occasion and pray to Almighty God for the peace of her holy soul. Her sweet memories remain in the hearts of the authors, who are deeply grateful to her. The authors are also thankful to Shri Baldev Singh IAS, then Chief Executive Officer, Zilla Parishad, Kolhapur and to the supportive staffs of Veterinary Dispensary Grade 1, Navargaon, District Chandrapur Mr. Natthu Chikram and Mr. Kavadu Kadmi who maintained friendly and co-operation environment during the stay of authors.



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